Liang Junwu's death

Liang Junwu, an expert in semiconductor material, academician of the Chinese Academy of Engineering, and researcher at the Chinese Academy of Sciences, died in Beijing on June 23, 2022 at the age of 89.

Liang Junwu information map

Liang Junwu, born on September 18, 1933, was born in Wuhan, Hubei. He graduated from Wuhan University in 1955 and studied deputy doctoral degrees at the Soviet Academy of Sciences from 1956 to 1960. He was elected as an academician of the Chinese Academy of Engineering in 1997. Former director and honorary director of the Chinese Electronics Society semi -electronic material branch.

Liang Junwu is an veteran expert in my country in China. In the 1960s, he resolved the key technologies of silicon melting silicon melting in high -purity zones in the 1960s. In 1964, the room temperature laser was prepared with GAAS liquid extension materials. In 1979, it was successfully developed into a high -quality silicon area melting single crystal for large -scale integrated circuits, no vortex, low micro -defects, low -carbon, and controllable oxygen.

In the 1980s, it first created a single crystal of nitrogen -doped neutrons, which solved the integrity and uniformity of silicon wafers. In the early 1990s, the MOCVD growth of the super crystal quantum trap material was studied. In terms of crystal integrity, electrical performance, and super crystal structural control, China's super crystal quantum material material was promoted to a practical level.

Liang Junwu was accompanied by the scientific research of semiconductor materials in his life. He once said in the interview that he hoped that through his own scientific research experience, he inspired young researchers to let them see that this career could make a difference, so that they felt that they could also make it. score.

Source: Guangming Daily

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