Academician Liang Junwu, an expert in semiconductor material, died at the age of 89

Author:Scientific network Time:2022.06.24

According to a promise issued by the Institute of Semiconductor Research of the Chinese Academy of Sciences, Liang Junwu, an academician of the Chinese Academy of Engineering, researcher at the Institute of Semiconductor Research of the Chinese Academy of Sciences, and the famous semiconductor material scientist in China, died at 179 at 17:00 on June 23, 2022 at the age of 89.

According to reports, Liang Junwu was born in Wuhan, Hubei on September 18, 1933. He graduated from Wuhan University in 1955 and studied at the former Soviet Academy of Sciences from 1956 to 1960 and obtained a deputy Dutch degree.

For more than 60 years, he has made important contributions to the discipline construction, technological innovation, industrial revitalization, and talent training in the field of semiconductor materials in my country. Liang Junwu has won the second prize of the Science and Technology Achievement of the National Science and Technology Commission and the second prize of the second prize of the new product. The second prize of scientific and technological progress has been more than 20 times such as the second prize. In 1997, he was elected academician of the Chinese Academy of Engineering.

Liang Junwu worked hard and accomplished in the field of semiconductor materials science, and achieved a series of important scientific research results.

In the 1960s, the key technologies of high -pure silicon melting were resolved. In 1964, the room temperature laser was prepared with GAAS liquid extension materials. In 1979, it was successfully developed into a high -quality silicon area melting single crystal for large -scale integrated circuits, no vortex, low micro -defects, low -carbon, and controllable oxygen.

In the 1980s, the problem of the integrity and uniformity of the silicon wafer was the first in the 1980s. In the early 1990s, the MOCVD growth of the super crystal quantum trap material was studied. In terms of crystal integrity, electrical performance, and super crystal structural control, China's super crystal quantum material material was promoted to a practical level. He presided over the research of "Seven Five -Year Plan" and "Eighth Five -Year Plan" key silicon extension, and completed the research of microcomputer control, light heating, low -pressure silicon extension materials and equipment. He also played a positive role in the research and industrialization of solar batteries.

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