"Nature • Newsletter" reports the latest research progress of Academician Hao Yue team of Xi'an University of Electronic Science and Technology

Recently, Professor Zhang Jincheng, Academician Hao Yue team of Xi'an University of Electronic Science and Technology, and Professor Zhou Hong have made important progress in the research on ultra-wide-wide procedure semiconductor oxidation power devices. Heterogeneous diode. The structure of this structure through heterogeneous acupuncture points, which realizes the diode of the oxidation power diode with super high pressure resistance and extremely low -database resistance. The power advantage value is as high as 13.2GW/CM2. value. Related results are published in the international journal "Nature Communications" in the international journal "Nature Communications".

Research Background:

Oxidation (β-Ga2O3) is a typical representative of ultra-wide procedure semiconductor. The width of the forbidden band is as high as (~ 4.8 EV). One of the ideal semiconductor materials of high -efficiency energy -saving semiconductor devices can achieve three advantages of high breakdown, low power consumption and low -cost device chips, and have major application prospects in the fields of electricity transmission conversion, electric vehicles, high -speed rail. Compared with the third -generation semiconductor GAN and SIC in the current industry, the GA2O3 power device has lower drive resistance under the same pressure. It will achieve lower power consumption and higher conversion in the field of electrical conversion. efficiency. Therefore, in recent years, oxidation semiconductors have become the hotspot of international research on semiconductors and high technology competition systems.

Since 2018, under the leadership of Academician Hao Yue, Xi'an University of Electronic Science and Technology has achieved a series of technological innovations such as the growth of MOCVD equipment, high -quality oxidation materials, new structures and new processes such as high -quality oxidation, high -quality oxidation, and new craftsmanship. The high -speed improvement of power transistor performance, as shown in the figure, has achieved a number of milestone results, so that the level of research level in my country's oxide power device has entered the forefront of the world.

Research Progress of the Research on Power Crystal Pipe in Xi'an University of Electronic Science and Technology

Research Innovation:

Due to the difficulty of P -type doping, the relocation rate of the acupoints is low, and the carrier bipolar transportation and its conductive modulation effect in the oxide power device have not been realized. This is a key bottleneck that restricted the performance of the power device to further improve the performance of the power device. To this end, this article builds a new type of P-NIO/N-GA2O3 heterogeneous PN diode structure, as shown in Figure 3 (a). On the one hand, by completing PN heterogeneous knots, magnesium injection terminals, high K/low K Pop pine terminals, etc., using high temperature heating annealing to suppress non -intentional doping can greatly weaken Figure 2 (b) opened up new technical ways for the development of high -pressure resistant oxide devices, and achieved 8.3 KV ultra -high -resistant pressure, as shown in Figure 2 (C). On the other hand, thanks to the design of the low -oriented PN heterogeneous knot, the diode of the ultra -wide prohibited PN heterogeneous knot power realizes a lower opening. When the positive bias, the acupuncture point is reduced. The acupuncture point jumps over PN heterogeneous knots and enters the N zone. When the concentration of the empty acupoint is higher than the electronic concentration, the electronic concentration rises, thereby significantly reduced the device's communication resistance, as shown in Figure 2 (d), as the positive voltage of the forward voltage is shown in Figure 2 (d). Increased the slightly reduced resistance, and the acupoint super injection effect was achieved in the oxide device. The developed oxide power diode has ultra-high pressure and extremely low resistance. The power superior P-FOM is as high as 13.2 GW/CM2, which is the highest value of the oxide semiconductor device at the present. (Correspondent: Cheng Yan Zhou Hong, University of Electronic Science and Technology, Xi'an)

(A) The device three -dimensional structure schematic diagram, (b) the device structure is simulated when the device structure is 8.3 KV resistance,

(C) Device breakdown diagram, (D) Device positive direction diagram, (E) ultra-wide controllated semiconductor power device drive resistance-resistance comparison chart

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